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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000N DESCRIPTION With TO-3P(H)IS package High voltage,high speed Low collector saturation voltage APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 1500 700 5 8 15 4 UNIT V V V A A A W ae ae Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. S2000N SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.2 V ICBO Collector cut-off current VCB=1500V; VBE=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 COB IN DC current gain Collector output capacitance IC=4.5A ; VCE=5V fT Transition frequency Switching times CHA E SEM NG IE=0 ; VCB=10V;f=1MHz OND IC 4.5 TOR UC 9 95 pF 2 MHz 30 IC=0.1A ; VCE=10V ts Storage time ICP=4.5A;IB1(end)=1.0A fH=15.75kHz 8 12 |I s tf Fall time 0.4 0.7 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2000N CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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